modulatingtheelectron-donatingorelectron-withdrawingstrengthofarepeatingunitind–apolymersresultsinanOptimumfrontierorbitalmolecularenergylevel(Highestoccupiedmolecularorbital,HOMO; lowest unoccupied molecularorbital,Lumo(thatallowsefficientchargeinjectionandextraction)holeorelectron)from the electrode.[5] Further,thischaardallowsconvertingthechargetransportofpolymericsemiconductorsfromap-typeintoan-type,whichIsoneofthenotableadvantagesofd–apolymers.[4,5,15]however,thedevelopmentofn-typeofetsstilllagsbehindthatofp-type OFETs,mostlybecauseelectron-withdrawingbuildingunitswithalowLumoenergylevelandhighelectrontransportarerare.sincen-typeofetsareanimportantcomponentin many electronic applications,suchaslight-emittingfetsandcomplementarycircuits,studies on n-type polymers haveattracted particular attention。
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